SK hynix has developed HBM3E memory with 1.15 TB/s of bandwidth
South Korean company SK hynix announced the development of HBM3E memory designed primarily for artificial intelligence applications. According to the company's claims, the new memory standard can handle data throughputs of up to 1.15 TB/s. Product samples are already being shipped to selected customers for performance evaluation.
HBM3E is an improved version of the fifth-generation HBM3 memory, which replaces the previous HBM, HBM2, HBM2E and HBM3 memories. SK hynix uses Advanced Mass Reflow Molded Underfill (MR-MUF) technology, which is a method of combining multiple memory chips on a single substrate by soldering. This technology has improved heat dissipation efficiency by 10%.
There is talk of backward compatibility with HBM3 - developers and OEMs will be able to integrate the new memory standard into existing systems without the need for significant design changes.
SK hynix plans to organize mass production of HBM3E in the first half of next year.
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